insulated gate bipolar transistor ultralow v ce(on) , 342 a GA200SA60Sp vishay semiconductors document number: 94363 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 note (1) maximum i rms current admitted 100 a to do not exceed the maximum temperature of terminals features ? standard: optimized for minimum saturation voltage and low speed up to 5 khz ? lowest conduction losses available ? fully isolated package (2500 v ac ) ? very low internal inductance (5 nh typical) ? industry standard outline ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? designed for increased operating efficiency in power conversion: ups, smps, tig welding, induction heating ? easy to assemble and parallel ? direct mounting to heatsink ? plug-in compatible with other sot-227 packages note (1) maximum i rms current admitted 100 a to do not exceed the maximum temper ature of terminals product summary v ces 600 v v ce(on) (typical) at 200 a, 25 c 1.33 v i c at t c = 97 c (1) 200 a s ot-227 absolute maximum ratings parameter symbol test conditions max. units collector to emitte r breakdown voltage v ces 600 v continuous coll ector current i c (1) t c = 25 c 342 a t c = 97 c 200 pulsed collector current i cm repetitive rating; v ge = 20 v, pulse width limited by maximum juncti on temperature see fig. 15 400 clamped inductiv e load current i lm v cc = 80 % (v ces ), v ge = 20 v, l = 10 h, r g = 2.0 ? , see fig. 14 400 gate to emitter voltage v ge 20 v reverse voltage avalanche energy e arv repetitive rating; pu lse width limited by maximum junction temperature 155 mj rms isolation voltage v isol any terminal to case, t = 1 minute 2500 v maximum power dissipation p d t c = 25 c 781 w t c = 100 c 312 operating junction and storage temperature range t j , t stg - 55 to + 150 c mounting torque 6-32 or m3 screw 12 (1.3) lbf ?? in (n ? m) thermal and mechanical specifications parameter symbol typ. max. units junction to case r thjc -0.16 c/w case to sink, flat, greased surface r thcs 0.05 - weight of module 30 - g
GA200SA60Sp vishay semiconductors insulated gate bipolar transistor ultralow v ce(on) , 342 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94363 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 notes (1) pulse width ? 80 s; duty factor ? 0.1 % (2) pulse width 5.0 s, single shot electrical specifications (t j = 25 c unless otherwise noted) parameter symbol test conditi ons min. typ. max. units collector to emitte r breakdown voltage v (br)ces v ge = 0 v, i c = 250 a 600 - - v emitter to collector breakdown voltage v (br)ecs (1) v ge = 0 v, i c = 1.0 a 18 - - temperature coeff. of breakdown voltage ? v (br)ces / ? t j v ge = 0 v, i c = 1.0 ma - 0.62 - v/c collector to emitter satura tion voltage v ce(on) i c = 100 a v ge = 15 v see fig. 2, 5 - 1.10 1.3 v i c = 200 a - 1.33 - i c = 100 a, t j = 150 c - 1.02 - gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 3.0 - 6.0 temperature coeff. of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 2 ma - - 10 - mv/c forward transconductance g fe (2) v ce = 100 v, i c = 100 a 90 150 - s zero gate voltage collector current i ces v ge = 0 v, v ce = 600 v - - 1.0 ma v ge = 0 v, v ce = 10 v, t j = 150 c - - 10 gate to emitter leakage current i ges v ge = 20 v - - 250 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units total gate charge (turn-on) q g i c = 100 a v cc = 400 v v ge = 15 v; see fig. 8 - 770 1200 nc gate emitter charge (turn-on) q ge - 100 150 gate collector charge (turn-on) q gc - 260 380 turn-on delay time t d(on) t j = 25 c i c = 100 a v cc = 480 v v ge = 15 v r g = 2.0 ? energy losses include tail see fig. 9, 10, 13 -78- ns rise time t r -56- turn-off delay time t d(off) - 890 1300 fall time t f - 390 580 turn-on switching loss e on -0.98- mj turn-off switching loss e off - 17.4 - total switching loss e ts - 18.4 25.5 turn-on delay time t d(on) t j = 150 c i c = 100 a, v cc = 480 v v ge = 15 v, r g = 2.0 ? energy losses include tail see fig. 10, 11, 13 -72- ns rise time t r -60- turn-off delay time t d(off) -1500- fall time t f -660- total switching loss e ts - 35.7 - mj internal emitter inductance l e between lead, and center of the die contact -5.0- nh input capacitance c ies v ge = 0 v v cc = 30 v f = 1.0 mhz; see fig. 7 - 16 250 - pf output capacitance c oes -1040- reverse transfer capacitance c res -190-
GA200SA60Sp insulated gate bipolar transistor ultralow v ce(on) , 342 a vishay semiconductors document number: 94363 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - maximum collector current vs. case temperature fig. 5 - typical collecto r to emitter voltage vs. junction temperature for both: d u ty cycle: 50 % t j = 125 c t sink = 90 c gate drive as specified po w er dissipation = 140 w 0 250 0.1 f - frequency (khz) load current (a) 1 10 100 200 150 100 50 clamp voltage: 80 % of rated triang u lar w ave: i 60 % of rated voltage ideal diodes sq u are w ave: i 1 10 100 1000 0.5 1.0 1.5 2.0 2.5 v ce - collector to emitter voltage (v) i c - collector to emitter current (a) v ge = 15 v 20 s p u lse w idth t j = 150 c t j = 25 c 10 100 1000 567 v ge - gate to emitter voltage (v) i c - collector to emitter current (a) t j = 150 c t j = 25 c v cc = 50 v 5 s p u lse w idth 0 80 120 160 40 20 100 140 60 0 50 100 150 250 200 300 350 t c - case temperature (c) maximum dc collector current (a) dc 1 2 3 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 t j - junction temperature (c) v ce - collector to emitter voltage (v) v ge = 15 v 80 s p u lse w idth i c = 400 a i c = 200 a i c = 100 a
GA200SA60Sp vishay semiconductors insulated gate bipolar transistor ultralow v ce(on) , 342 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94363 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 6 - maximum effective transient thermal impedance, junction to case fig. 7 - typical capacitance vs. collector to em itter voltage fig. 8 - typical gate charge vs. gate to emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 100 10 t 1 - rectangular pulse duration (s) z thjc - thermal response d = 0.75 d = 0.50 d = 0.25 d = 0.10 d = 0.05 d = 0.02 d = 0.01 single p u lse (thermal resistance) 1 10 100 0 6000 12 000 18 000 24 000 30 000 v ce - collector to emitter voltage (v) c - capacitance (pf) v ge = 0 v , f = 1 mhz c ies = c ge + c gc , c ce shorted c res = c gc c oes = c ce + c gc c ies c oes c res 0 200 400 600 800 0 4 8 12 16 20 q g - total gate charge (nc) v ge - gate to emitter voltage (v) v cc = 400 v i c = 100 a 0 1020304050 18 19 20 21 22 23 24 25 r g - gate resistance ( ) total switching losses (mj) v cc = 480 v v ge = 15 v t j = 25 c i c = 200 a total switching losses (mj) - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 10 100 1000 t j - junction temperature (c) i c = 200 a i c = 100 a i c = 350 a r g = 2.0 v ge = 15 v v cc = 480 v
GA200SA60Sp insulated gate bipolar transistor ultralow v ce(on) , 342 a vishay semiconductors document number: 94363 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 fig. 11 - typical switching losses vs. collector current fig. 12 - turn-off soa fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit fig. 14a - switching lost test circuit total switching losses (mj) 100 150 200 250 300 350 0 40 80 120 160 i c - collector current (a) r g = 2.0 t j = 150 c v cc = 480 v v ge = 15 v i c - collector current (a) 1 10 100 1000 1 10 100 1000 safe operating area v ce - collector to emitter voltage (v) v ge = 20 v t j = 125 c d.u.t. 50 v l v c * * driver same type as d.u.t.; v c = 80 % of v ce (max) note: d u e to the 50 v po w er s u pply, p u lse w idth and ind u ctor w ill increase to obtain rated i d 1000 v 1 2 1 2 480 v 4 x i c at 25 c 480 f 960 v 0 v to 480 v r l = = 50 v driver* 1000 v d.u.t. i c v c l * driver same type as d.u.t., v c = 480 v 3 1 2
GA200SA60Sp vishay semiconductors insulated gate bipolar transistor ultralow v ce(on) , 342 a www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94363 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 22-jul-10 fig. 14b - switching loss waveforms ordering information table t = 5 s t d (on) t f t r 90 % t d (off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3 1 - insulated gate bipolar transistor (igbt) 2 - generation 4, igbt silicon, dbc construction 3 - current rating (200 = 200 a) 4 - single switch, no diode 5 - sot-227 6 - voltage rating (60 = 600 v) 8 - none = standard production p = lead (pb)-free 7 - speed/type (s = standard speed) device code 5 13 24 678 g a 200 s a 60 s p
GA200SA60Sp insulated gate bipolar transistor ultralow v ce(on) , 342 a vishay semiconductors document number: 94363 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 22-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 circuit configuration links to related documents dimensions www.vishay.com/doc?95036 packaging information www.vishay.com/doc?95037 3 (c) 2 ( g ) 1, 4 (e) lead a ss ignment e c g e 3 2 4 1 n-channel
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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